Diodes ZXTP2012Z - Manual (Page 4)

ZXTP2012Z
Da
tasheet Number: DS33713 Rev. 3 - 2
4 of 7
www.diodes.com
October 2012
© Diodes Incorporated
ZXTP2012Z
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-100 -120 - V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Notes 9) BV
CER
-100 -120 - V I
C
= -1µA, R
B
≤ 1k Ω
Collector-Emitter Breakdown Voltage (Notes 9) BV
CEO
-60 -80 - V I
C
= -10mA
Emitter-Base Breakdown Voltage BV
EBO
-7 -8.1 - V I
E
= -100µA
Collector Cutoff Current I
CBO
-
< -1 -20
-500
nA
nA V CB = -80V
V
CB
= -80V, T
A
= +100°C
Collector Cutoff Current
I
CER
R ≤ 1k Ω
-
< -1 -20
-500
nA
nA V
CB
= -80V
V
CB
= -80V, T
A
= +100°C
Emitter Cutoff Current I EBO
- < -1 -10 nA V EB = -6V
DC current transfer Static ratio (Notes 9) h
FE
100
100
45
10
250
200
90
25
300
I
C
= -10mA, V
CE
= -1V
I
C
= -2A, V
CE
= -1V
I
C
= -5A, V
CE
= -1V
I
C
= -10A, V
CE
= -1V
Collector-Emitter Saturation Voltage (Notes 9) V
CE(sat)
-
-14
-50
-75
-160
-20
-65
-110
-215
mV
I C = -100mA, I B = -10mA
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -5A, I
B
= -500mA
Base-Emitter Saturation Voltage (Notes 9) V
BE(sat)
- -950 -1050 mV I
C
= -5A, I
B
= -500mA
Base-Emitter Turn-on Voltage (Notes 9) V BE(on)
- -840 -950 mV I C = -5A, V CE = -1V
Transitional Frequency (Notes 9) f
T
- 120 - MHz
I
C
= -100mA, V
CE
= -10V,
f = 50MHz
Output capacitance C
obo
- 48 - pF V
CB
= -10V, f = 1MHz,
Switching Time
t
ON
-
39
- ns
V
CC
= -10V, I
C
= -1A,
I B1 = I B2 = -100mA t
OFF
370
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.