Diodes ZXTP2012Z - Manual (Page 2)

ZXTP2012Z
Da
tasheet Number: DS33713 Rev. 3 - 2
2 of 7
www.diodes.com
October 2012
© Diodes Incorporated
ZXTP2012Z
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-100 V
Collector-Emitter Voltage V
CEO
-60 V
Emitter-Base Voltage V EBO
-7 V
Continuous Collector Current I
C
-4.3 A
Peak Pulse Current I
CM
-15 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
Linear derating factor P
D 1.5
12
W
mW/°C
Power Dissipation (Note 7)
Linear derating factor P
D
2.1
16.8
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 6) R θJA 83 °C/W
Thermal Resistance, Junction to Ambient (Note 7) R θJA 60 °C/W
Thermal Resistance, Junction to Leads (Note 8) R θJL 3.23 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150
°C
Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; device
measured when operating in steady state condition.
7. Same as note (6), except the device is mounted on 50mm X 50mm single sided 1oz weight copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).