Characteristic, Symbol, Value – Diodes ZXTP2013G User Manual
Page 2: Unit, Jedec class, Zxtp2013g, Maximum ratings, Thermal characteristics, Esd ratings

ZXTP2013G
Da
tasheet Number: DS33714 Rev. 2 - 2
2 of 7
May 2013
© Diodes Incorporated
ZXTP2013G
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-140
V
Collector-Emitter Voltage
V
CEO
-100
V
Emitter-Base Voltage
V
EBO
-7
V
Continuous Collector Current
I
C
-5
A
Peak Pulse Current
I
CM
-10
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
Linear derating factor
P
D
3.0
24
W
mW/°C
Power Dissipation (Note 6)
Linear derating factor
P
D
1.6
12.8
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 5)
R
• JA
42
°C/W
Thermal Resistance, Junction to Ambient (Note 6)
R
• JA
78
°C/W
Thermal Resistance Junction to Lead (Note 7)
R
• JL
10.48
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
ESD Ratings
(Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
• 400
V
C
Notes:
5. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is surface mounted on 25mm x 25mm with 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.