Diodes ZXTP19100CFF - Manual (Page 4)

ZXTP19100CFF
Issue 1 - October 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated).
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-Base Breakdown
Voltage BV
CBO
-110 -135 V I
C
= -100 ␮A
Collector-Emitter
Breakdown Voltage (Base
open) BV
CEX
-110 -135 V I
C
= -100
␮A, R
BC
< 1k
Ω or
0.25V > V
BC
> -0.25V
Collector-Emitter
Breakdown Voltage (Base
open) BV
CEO
-100 -135 V I
C
= -10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300␮s; duty cycle ≤ 2%.
Emitter-Base Breakdown
Voltage BV
EBO
-7 -8.3 V I
E
= -100
␮A
Emitter-Collector
Breakdown Voltage
(Reverse Blocking) BV
ECX
-7 -8.3 V I
E
= -100
␮A, R
BC
< 1k
⑁ or
0.25V > V
BC
> -0.25V
Emitter-Collector
Breakdown Voltage (Base
open) BV
ECO
-7 -8.7 V I
E
= -100
␮A
Collector-Base Cut-Off
Current I
CBO
<-1 -50
-0.5
nA
␮A
V
CB
= -110V
V
CB
= -110V, T
amb
= 100°C
Emitter-Base Cut-Off
Current I
EBO
<-1 -50 nA V
EB
= -5.6V
Collector-Emitter
Saturation Voltage V
CE(sat)
-100
-95
-175
-215
-130
-120
-225
-275
mV
mV
mV
mV
I
C
= -0.5A, I
B
= -20mA (*)
I
C
= -1A, I
B
= -100mA (*)
I
C
= -1A, I
B
= -50mA (*)
I
C
= -2A, I
B
= -200mA (*)
Base-Emitter Saturation
Voltage V
BE(sat)
-870 -950 mV I
C
= -2A, I
B
= -200mA (*)
Base-Emitter Turn-On
Voltage V
BE(on)
-810 -
900
mV I
C
= -2A, V
CE
= -2V (*)
Static Forward Current
Transfer Ratio h
FE
200
70
20
330
135
30
500 I
C
= -100mA, V
CE
= -2V (*)
I
C
= -1A, V
CE
= -2V (*)
I
C
= -2A, V
CE
= -2V (*)
Transition Frequency f
T
142 MHz I
C
= -100mA, V
CE
= -10V
f = 50MHz
Input Capacitance C
ibo
291 400 pF V
EB
= -0.5V, f = 1MHz (*)
Output Capacitance C
obo
23.5 pF V
CB
= -10V, f = 1MHz (*)
Delay Time t
d
24.7 ns
I
C
= -500mA, V
CC
= -10V
I
B1
= -I
B2
= -50mA
Rise Time t
r
22.4 ns
Storage Time t
s
660 ns
Fall Time t
f
107 ns