Diodes ZXTP19100CFF - Manual (Page 2)

ZXTP19100CFF
Issue 1 - October 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs
(e) Junction to Case from Collector Tab.
Parameter Symbol Limit Unit
Collector-base voltage V
CBO
-110 V
Collector-emitter voltage (forward blocking) V
CEX
-110 V
Collector-emitter voltage V
CEO
-100 V
Emitter-collector voltage (reverse blocking) V
ECO
-7 V
Emitter-base voltage V
EBO
-7 V
Continuous collector current (c) I
C
-2 A
Peak pulse current I
CM
-3 A
Base current I
B
-1 A
Power dissipation at T
A
=25
°C (a)
Linear derating factor
P
D
0.84 W
mW/
°C
Power dissipation at T
A
=25
°C (b)
Linear derating factor
P
D
1.34 W
mW/
°C
Power dissipation at T
A
=25
°C (c)
Linear derating factor
P
D
1.5 W
mW/
°C
Power dissipation at T
A
=25
°C (d)
Linear derating factor
P
D
2 W
mW/
°C
Operating and storage temperature range T
j
, T
stg
-55 to 150
°C
Parameter Symbol Value Unit
Junction to Ambient (a) R ␪JA 149.3
°C/W
Junction to Ambient (b) R ␪JA 93.4
°C/W
Junction to Ambient (c) R
␪JA
83.3
°C/W
Junction to Ambient (d) R ␪JA 60
°C/W
Junction to Case (e) R ␪JC 38
°C/W