Diodes ZXTP25040DFL - Manual (Page 4)

ZXTP25040DFL
Issue 3 - January 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage BV
CBO
-45 -75 V I
C
= -100
␮A
Collector-emitter breakdown
voltage (base open) BV
CEO
-40 -65 V
I
C
= -10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
␮
s; duty cycle
Յ
2%.
Emitter-collector breakdown
voltage (reverse blocking) BV
ECO
-3 -8.7 V
I
E
= -100
␮A (*)
Emitter-base breakdown
voltage BV
EBO
-7 -8.2 V I
E
= -100
␮A
Collector cut-off current I
CBO
<-1 -50
-20 nA
␮A V
CB
= -36V
V
CB
= -36V, T
amb
= 100°C
Emitter cut-off current I
EBO
<-1 -50 nA V
EB
= -5.6V
Collector-emitter saturation
voltage V
CE(sat)
-75 -95 mV
I
C
= -0.5A, I
B
= -20mA
(*)
-200 -290 mV
I
C
= -1A, I
B
= -20mA
(*)
-95 -115 mV
I
C
= -1A, I
B
= -100mA
(*)
-160 -190 mV
I
C
= -1.5A, I
B
= -75mA
(*)
-245 -300 mV
I
C
= -3A, I
B
= -300mA
(*)
Base-emitter saturation
voltage V
BE(sat)
-915 -1000 mV
I
C
= -1.5A, I
B
= -75mA
(*)
Base-emitter turn-on voltage V
BE(on)
-825 -900 mV
I
C
= -1.5A, V
CE
= -2V
(*)
Static forward current transfer
ratio h
FE
300 450 900
I
C
= -10mA, V
CE
= -2V
(*)
120 200
I
C
= -1.5A, V
CE
= -2V
(*)
15 40
I
C
= -3A, V
CE
= -2V
(*)
Transition frequency f
T
270 MHz I
C
= -50mA, V
CE
= -10V
f = 50MHz
Output capacitance C
obo
17.4 25 pF
V
CB
= -10V, f = 1MHz
(*)
Delay time t
(d)
34 ns V
CC
= -15V. I
C
= -750mA,
I
B1
= I
B2
= -15mA.
Rise time t
(r)
41 ns
Storage time t
(s)
266 ns
Fall time t
(f)
53 ns