Diodes ZXTP25040DFL User Manual
Summary, Description, Features

© Zetex Semiconductors plc 2007
ZXTP25040DFL
40V, SOT23, PNP low power transistor
Summary
BV
CEO
> -40V
BV
ECO
> -3V
I
C(cont)
= -1.5A
V
CE(sat)
< -115mV @ 1A
R
CE(sat)
= 82m
⍀
P
D
= 350mW
Complementary part number ZXTN25040DFL
Description
Advanced process capability has been used to achieve high current gain
hold up making this device ideal for applications requiring high pulse
currents.
Features
•
High peak current
•
Low saturation voltage
•
40V forward blocking voltage
Applications
•
MOSFET and IGBT gate driving
•
Low power DC-DC conversion
Ordering information
Device marking
1A2
Device
Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXTP25040DFLTA
7
8
3,000
C
E
B
C
E
B
Pinout - top view
Table of contents
Document Outline
- ZXTP25040DFL
- 40V, SOT23, PNP low power transistor
- Summary
- Description
- Features
- Applications
- Ordering information
- Device marking
- Absolute maximum ratings
- Thermal resistance
- Characteristics
- Electrical characteristics (at Tamb = 25˚C unless otherwise stated)
- Typical characteristics
- Package outline - SOT23
- Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches