Diodes ZXTP07040DFF - Manual (Page 4)

ZXTP07040DFF
Issue 1 - September 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage BV
CBO
-50 -80 V I
C
= -100
␮A
Collector-emitter breakdown
voltage (base open) BV
CEO
-40 -65 V I
C
= -10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Emitter-base breakdown
voltage BV
EBO
-7 -8.3 V I
E
= -100
␮A
Emitter-collector breakdown
voltage (reverse blocking) BV
ECO
-3 -8.6 V I
E
= -100
␮A
Collector-base cut-off current I
CBO
<-1 -50 nA V
CB
= -36V
-20
␮A
V
CB
= -36V, T
amb
= 100°C
Emitter-base cut-off current I
EBO
<-1 -50 nA V
EB
= -5.6V
Collector-emitter saturation
voltage V
CE(sat)
-110 -180 mV I
C
= -0.5A, I
B
= -5mA (*)
-80 -100 mV I
C
= -1A, I
B
= -100mA (*)
-230 -400 mV I
C
= -1A, I
B
= -10mA (*)
-310 -540 mV I
C
= -2A, I
B
= -40mA (*)
-250 -390 mV I
C
= -3A, I
B
= -150mA (*)
Base-emitter saturation
voltage V
BE(sat)
-935 -1040 mV I
C
= -3A, I
B
= -150mA (*)
Base-emitter turn-on voltage V
BE(on)
-825 -930 mV I
C
= -3A, V
CE
= -2V (*)
Static forward current
transfer ratio h
FE
300 450 800 I
C
= -10mA, V
CE
= -2V (*)
250 380 I
C
= -0.5A, V
CE
= -2V (*)
200 330 I
C
= -1A, V
CE
= -2V (*)
80 160 I
C
= -3A, V
CE
= -2V (*)
Transition frequency f
T
100 200 MHz I
C
= -50mA, V
CE
= -5V
f = 50MHz
Output capacitance C
obo
30 40 pF V
CB
= -10V, f = 1MHz (*)
Delay time t
d
20.7 ns V
CC
= -10V,
I
C
= -500mA,
I
B1
= I
B2
= -50mA
Rise time t
r
12.2 ns
Storage time t
s
375 ns
Fall time t
f
72 ns