Diodes MMDT2222V - Manual (Page 2)

DS30563 Rev. 4 - 2 2 of 4 MMDT2222V
www.diodes.com
Electrical Characteristics @ T
A
= 25 °C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage V
(BR)CBO 75 ¾ V I
C
= 10 mA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO 40 ¾ V I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO 6.0 ¾ V I
E
= 10 mA, I
C
= 0
Collector Cutoff Current I
CBO
¾ 10
nA
mA
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= 150 °C
Collector Cutoff Current I CEX
¾ 10 nA V
CE
= 60V, V
EB(OFF)
= 3.0V
Emitter Cutoff Current I
EBO
¾ 10 nA V
EB
= 3.0V, I
C
= 0
Base Cutoff Current I
BL
¾ 20 nA V
CE
= 60V, V
EB(OFF)
= 3.0V
ON CHARACTERISTICS (Note 4)
DC Current Gain h FE
35
50
75
100
40
50
35
¾
¾
¾
300
¾
¾
¾
¾
I C = 100 mA, V
CE = 10V
I
C
= 1.0mA, V
CE
= 10V
I C = 10mA, V CE = 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V, T
A
= -55 °C
I
C
= 150mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage V
CE(SAT)
¾
0.3
1.0
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage V
BE(SAT)
0.6
¾
1.2
2.0
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance C
obo
¾ 8 pF V
CB
= 10V, f = 1.0MHz, I
E
= 0
Input Capacitance C
ibo — 25 pF V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Current Gain-Bandwidth Product f
T 300 ¾ MHz
V
CE
= 20V, I
C
= 20mA,
f = 100MHz
Noise Figure NF ¾ 4.0 dB
V
CE
= 10V, I
C
= 100 mA,
R
S
= 1.0k W, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time t
d
¾ 10 ns V CC = 30V, I C = 150mA,
V
BE(off)
= - 0.5V, I
B1
= 15mA
Rise Time t r
¾ 25 ns
Storage Time t
s
¾ 225 ns V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
Fall Time t f
¾ 60 ns
NEW
P
RODUCT
Notes: 4. Short duration test pulse used to minimize self-heating effect.