Diodes ZXTP25020DFH - Manual (Page 4)

ZXTP25020DFH
Issue 1 - July 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage BV
CBO
-25 -55 V I
C
= -100
␮A
Collector-emitter breakdown
voltage (base open) BV
CEO
-20 -45 V I
C
= -10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Emitter-base breakdown
voltage BV
EBO
-7 -8.3 V I
E
= -100
␮A
Emitter-collector breakdown
voltage (reverse blocking) BV
ECO
-4 -8.5 V I
C
= -100
␮A (*)
Collector cut-off current I
CBO
<-1 -50 nA V
CB
= -20V
-20
␮A
V
CB
= -20V, T
amb
= 100°C
Emitter cut-off current I
EBO
<-1 -50 nA V
EB
= -5.6V
Collector-emitter saturation
voltage V
CE(sat)
-50 -60 mV I
C
= -1A, I
B
= -100mA (*)
-150 -210 mV I
C
= -1A, I
B
= -10mA (*)
-180 -240 mV I
C
= -2A, I
B
= -40mA (*)
-155 -180 mV I
C
= -4A, I
B
= -400mA (*)
Base-emitter saturation
voltage V
BE(sat)
-960 -1050 mV I
C
= -4A, I
B
= -400mA (*)
Base-emitter turn-on
voltage V
BE(on)
-815 -900 mV I
C
= -4A, V
CE
= -2V (*)
Static forward current
transfer ratio h
FE
300 450 900 I
C
= -10mA, V
CE
= -2V (*)
200 310 I
C
= -1A, V
CE
= -2V (*)
70 100 I
C
= -4A, V
CE
= -2V (*)
20 I
C
= -10A, V
CE
= -2V (*)
Transition frequency f
T
290 MHz I
C
= -50mA, V
CE
= -10V
f = 50MHz
Output capacitance C
OBO
21 30 pF V
CB
= -10V, f = 1MHz (*)
Delay time t
(d)
14.2 V
CC
= -10V. I
C
= -1A, I
B1
= I
B2
= -50mA.
Rise time t
(r)
16.3
Storage time t
(s)
186
Fall time t
(f)
32.7