Diodes ZXTP25012EZ - Manual (Page 5)

ZXTP25012EZ
Issue 1- December 2007 5 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-Base breakdown
voltage BV
CBO
-12 -35 V I
C
= -100
μA
Collector-Emitter
breakdown voltage BV
CEO
-12 -25 V I
C
= -10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300µs; duty cycle ≤ 2%.
Emitter-Base breakdown
voltage BV
EBO
-7 -8.5 V I
E
= -100
μA
Collector-Base cut-off
current I
CBO
<-1 -50
-0.5
nA
μA V
CB
= -12V
V
CB
= -12V, T
amb
=100°C
Emitter Base cut-off
current I
EBO
<-1 -50 nA V
EB
= -5.6V
Collector-Emitter
saturation voltage V
CE(sat)
-55
-155
-185
-200
-70
-265
-355
-285
mV
mV
mV
mV
I
C
= -1A, I
B
= -100mA (*)
I
C
= -1A, I
B
= -10mA (*)
I
C
= -2A, I
B
= -40mA (*)
I
C
= -4.5A, I
B
= -450mA (*)
Base-Emitter saturation
voltage V
BE(sat)
-990 -1100 mV I
C
= -4.5A, I
B
= -450mA (*)
Base-Emitter turn-on
voltage V
BE(on)
-865 -975 mV I
C
= -4.5A, V
CE
= -2V (*)
Static forward current
transfer ratio h
FE
500
300
40
800
450
85
15
1500 I
C
= -10mA, V
CE
= -2V (*)
I
C
= -1A, V
CE
= -2V (*)
I
C
= -4.5A, V
CE
= -2V (*)
I
C
= -10A, V
CE
= -2V (*)
Transition frequency f
T
310 MHz I
C
= -50mA, V
CE
= -10V
f = 100MHz
Input capacitance C
ibo
127 250 pF V
EB
= -0.5V, f = 1MHz (*)
Output capacitance C
obo
16.9 30 pF V
CB
= -10V, f = 1MHz (*)
Delay time t
d
41 ns
V
CC
= -10V, I
C
= -1A,
I
B1
= -I
B2
= -10mA
Rise time t
r
62 ns
Storage time t
s
179 ns
Fall time t
f
65 ns