Diodes ZXTP07012EFF - Manual (Page 4)

ZXTP07012EFF
Issue 2 - June 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage BV
CBO
-12 -23 V I
C
= -100
␮A
Collector-emitter breakdown
voltage (base open) BV
CEO
-12 -16 V I
C
= -10mA (*) *
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Emitter-base breakdown
voltage BV
EBO
-7 -8.4 V I
E
= -100
␮A
Collector-base cut-off current I
CBO
<-1 -50 nA V
CB
= -10V
-20 ␮A V
CB
= -10V, T
amb
= 100°C
Emitter-base cut-off current I
EBO
<-1 -50 nA V
EB
= -5.6V
Collector-emitter saturation
voltage V
CE(sat)
-80 -100 mV I
C
= -0.5A, I
B
= -2.5mA (*)
-60 -75 mV I
C
= -1A, I
B
= -100mA (*)
-130 -165 mV I
C
= -1A, I
B
= -5mA (*)
-250 -350 mV I
C
= -2A, I
B
= -10mA (*)
-260 -340 mV I
C
= -4A, I
B
= -80mA (*)
Base-emitter saturation
voltage V
BE(sat)
-945 -1050 mV I
C
= -4A, I
B
= -80mA (*)
Base-emitter turn-on voltage V
BE(on)
-850 -950 mV I
C
= -4A, V
CE
= -2V (*)
Static forward current
transfer ratio h
FE
500 750 1500 I
C
= -10mA, V
CE
= -2V (*)
400 570 I
C
= -1A, V
CE
= -2V (*)
230 320 I
C
= -4A, V
CE
= -2V (*)
150 210 I
C
= -6A, V
CE
= -2V (*)
Transition frequency f
T
100 250 MHz I
C
= -50mA, V
CE
= -5V
f = 50MHz
Input capacitance C
ibo
223 pF V
CB
= -0.5V, f = 1MHz (*)
Output capacitance C
obo
49 60 pF V
CB
= -8V, f = 1MHz (*)
Delay time t
d
12.8 ns V
CC
= -10V.
I
C
= -500mA,
I
B1
= I
B2
= -50mA.
Rise time t
r
15.6 ns
Storage time t
s
240 ns
Fall time t
f
92.8 ns