Diodes MMDT4146 - Manual (Page 3)

MMDT4146
Document number: DS30162 Rev. 11 - 2
3 of 5
www.diodes.com
January 2009
© Diodes Incorporated
MMDT4146
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISS
IP
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Total Device, Note 1)
A
150
200
250
300
350
0
R C/W θJA
° = 625
1
10
1,000
100
0.1 1 10 1,000 100
h,
D
C
C
U
R
R
EN
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain
vs. Collector Current (PNP-4126)
C
0.01
0.1
10
1
1 10 100 1,000
V,
C
O
LL
E
C
T
O
R
-E
M
IT
T
E
R
S
A
T
U
R
A
TI
O
N
VO
L
T
AG
E
CE
(S
A
T
)
(V
)
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current (PNP-4126)
C
0.5
0.6
0.7
0.8
0.9
1.0
1 10 100
V
, BASE
-EM
IT
T
E
R
SA
T
U
R
A
T
IO
N V
O
L
T
A
G
E
BE
(SA
T
)
(V
)
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Base-Emitter Saturation Voltage
vs. Collector Current (PNP-4126)
C
I
C
I
B
= 10
1
100
10
0.1 1 10 100
C
A
P
A
C
IT
AN
C
E (
p
F
)
V , REVERSE VOLTAGE (V)
Fig. 5 Typical Capacitance Characteristics (PNP-4126)
R
1
10
1,000
100
0.1 1 10 1,000 100
h,
D
C
C
U
R
R
EN
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 6 Typical DC Current Gain
vs. Collector Current (NPN-4124)
C