Diodes MMDT4146 - Manual (Page 2)

MMDT4146
Document number: DS30162 Rev. 11 - 2
2 of 5
www.diodes.com
January 2009
© Diodes Incorporated
MMDT4146
Electrical Characteristics, NPN 4124 Section
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
V
(BR)CBO
30 ⎯ V I
C
= 10
μA, I
E
= 0
Collector-Emitter Breakdown Voltage V (BR)CEO
25 ⎯ V I C = 1.0mA, I B = 0
Emitter-Base Breakdown Voltage V (BR)EBO
5.0 ⎯ V I E = 10
μA, I
C = 0
Collector Cutoff Current I
CBO
⎯ 50 nA V
CB
= 20V, I
E
= 0V
Emitter Cutoff Current I
EBO
⎯ 50 nA V
EB
= 3.0V, I
C
= 0V
ON CHARACTERISTICS (Note 6)
DC Current Gain h
FE
120
60
360
⎯
⎯
I
C
= 2.0mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯ 0.30 V I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯ 0.95 V I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯ 4.0 pF V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance C
ibo
⎯ 8.0 pF V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Small Signal Current Gain h
fe
120 480 ⎯
V
CE
= 1.0V, I
C
= 2.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product f T
300 ⎯ MHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
Noise Figure NF ⎯ 5.0 dB
V CE = 5.0V, I C = 100
μA,
R
S
= 1.0k
Ω,
f = 1.0kHz
Electrical Characteristics, PNP 4126 Section
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
V (BR)CBO
-25 ⎯ V I C = -10
μA, I
E = 0
Collector-Emitter Breakdown Voltage V (BR)CEO
-25 ⎯ V I C = -1.0mA, I B = 0
Emitter-Base Breakdown Voltage V
(BR)EBO
-4.0 ⎯ V I
E
= -10 μA, I
C
= 0
Collector Cutoff Current I
CBO
⎯ -50 nA V
CB
= -20V, I
E
= 0V
Emitter Cutoff Current I
EBO
⎯ -50 nA V
EB
= -3.0V, I
C
= 0V
ON CHARACTERISTICS (Note 6)
DC Current Gain h
FE
120
60
360
⎯
⎯
I
C
= -2.0mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯ -0.40 V I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯ -0.95 V I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯ 4.5 pF V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance C
ibo
⎯ 10 pF V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Small Signal Current Gain h
fe
120 480 ⎯
V
CE
= -1.0V, I
C
= -2.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product f T
250 ⎯ MHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
Noise Figure NF ⎯ 4.0 dB
V CE = -5.0V, I C = -100
μA,
R
S
= 1.0k
Ω,
f = 1.0kHz
Notes: 6. Short duration pulse test used to minimize self-heating effect.