Mmbd2004s, Maximum ratings, Thermal characteristics – Diodes MMBD2004S User Manual
Page 2: Electrical characteristics
MMBD2004S
Document number: DS30281 Rev. 12 - 2
2 of 4
August 2012
© Diodes Incorporated
MMBD2004S
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
V
RRM
300
V
Working Peak Reverse Voltage
DC Blocking Voltage
V
RWM
V
R
240
V
RMS Reverse Voltage
V
R(RMS)
170
V
Forward Continuous Current (Note 5)
I
FM
225
mA
Peak Repetitive Forward Current (Note 5)
I
FRM
625
mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0µs
@ t = 1.0s
I
FSM
4.0
1.0
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
P
D
350
mW
Thermal Resistance Junction to Ambient Air (Note 5)
R
θJA
357
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 6)
V
(BR)R
300
⎯
V
I
R
= 100µA
Forward Voltage
V
F
⎯
0.87
1.0
V
I
F
= 20mA
I
F
= 100mA
Reverse Current (Note 6)
I
R
⎯
100
nA
µA
V
R
= 240V
V
R
= 240V, T
J
= +150
°C
Total Capacitance
C
T
⎯
5.0
pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
⎯
50
ns
I
F
= I
R
= 30mA,
I
rr
= 3.0mA, R
L
= 100
Ω
Notes:
5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at
6. Short duration pulse test used to minimize self-heating effect.
0
120
80
40
160
200
T , AMBIENT TEMPERATURE (ºC)
Figure 1 Power Derating Curve, Total Package
A
P
,
P
O
WE
R
DI
SSI
P
A
T
IO
N (
m
W
)
D
0
100
200
300
400
500
0
400
800
1,200
1,600
2,000
I,
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A
)
F
m
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
Figure 2 Typical Forward Characteristics, Per Element
F
100
1.0
10
0.1
0.01
1,000