Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DESD5V0S1BB User Manual
Page 2
![background image](/manuals/307561/2/background.png)
DESD5V0S1BB
Document number: DS35590 Rev. 5 - 2
2 of 4
March 2012
© Diodes Incorporated
DESD5V0S1BB
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Conditions
Peak Pulse Power Dissipation
P
PP
130 W
8/20
μs, per Fig. 1
Peak Pulse Current
I
PP
12 A
8/20
μs, per Fig. 1
ESD Protection – Contact Discharge
V
ESD_Contact
±30
kV
IEC 61000-4-2 Standard
ESD Protection – Air Discharge
V
ESD_Air
±30
kV
IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic Symbol
Value
Unit
Package Power Dissipation (Note 6)
P
D
150 mW
Thermal Resistance, Junction to Ambient (Note 6)
R
θJA
833
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Reverse Standoff Voltage
V
RWM
- - 5 V
-
Channel Leakage Current (Note 7)
I
RM
- 5
100
nA
V
RWM
= 5V
Clamping Voltage
V
CL
-
-
-
-
10
14
V
I
PP
= 1A, t
p
= 8/20
μs
I
PP
= 12A, t
p
= 8/20
μs
Breakdown Voltage
V
BR
5.5 - 9.5 V
I
R
= 1mA
Differential Resistance
R
DIF
-
0.4 -
Ω
I
R
= 10A, t
p
= 8/20
μs
Channel Input Capacitance
C
T
- 35 45 pF
V
R
= 0V, f = 1MHz
Notes:
6. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
0
t, TIME ( s)
Fig. 1 Pulse Waveform
μ
20
40
60
100
50
0
I
, PE
AK P
U
L
S
E
C
URRENT
(
%
I
)
Pp
p
P
20
25
30
35
0
1
2
3
4
5
6
V , REVERSE VOLTAGE (V)
Fig. 2 Typical Total Capacitance vs. Reverse Voltage
R
C
,
T
O
T
AL
C
A
P
A
C
IT
AN
C
E (
pF
)
T
f = 1 MHz