Diodes DESD6V8DLP - Manual (Page 2)

DESD6V8DLP
Document number: DS32140 Rev. 6 - 2
2 of 4
www.diodes.com
February 2011
© Diodes Incorporated
DESD6V8DLP
NEW PROD
UC
T
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Forward Voltage @ I
F
= 10mA V
F
1.25 V
Thermal Characteristics
Characteristic Symbol Value Unit
Peak Pulse Power (tp = 8x20 μs) (Note 4) T
A
= 25°C P
pk
70 W
Power Dissipation (Note 4) P
D
385 mW
Thermal Resistance Junction to Ambient (Note 4) T A = 25°C R θJA 325 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Reverse
Standoff
Voltage
Breakdown Voltage
V BR @ I T
Test
Current
Max. Reverse
Leakage @ V
RWM
(Note 5)
Maximum Dynamic
Impedance
f = 1kHz
Typical Total
Capacitance C T
V
R
= 0V, f = 1MHz
V
RWM
(V) Min (V) Typ (V) Max (V) I
T
(mA) I
R
(
μA) Z
ZT
@ I
T
( Ω) Z
ZK
@ I
ZK
( Ω) I
ZK
(mA) (pF)
5.25 6.4 6.8 7.2 5.0 1.0 30 300 0.5 40
Notes: 4. Device mounted on FR-5 PC board of size 1.0 x 0.75 x 0.62 inches.
5. Short duration pulse test used to minimize self-heating effect.
6. Clamping voltage value is based on an 8x20
μs peak pulse current (I
pp
) waveform.
0
t, TIME ( s)
Fig. 1 Pulse Waveform
μ
20 40 60
100
50
0
I
, PE
AK P
U
L
S
E
CURRENT
(
%
I
)
Pp
p
P
0
5
10
15
20
25
30
35
40
45
50
0 1 2 3 4 5 6
V , REVERSE VOLTAGE (V)
Fig. 2 Typical Total Capacitance vs. Reverse Voltage
R
C
,
T
O
T
AL
C
A
P
A
C
IT
A
N
C
E (
pF
)
T
f = 1MHz