Diodes DMS3019SSD - Manual (Page 3)

DMS3019SSD
Document number: DS35053 Rev. 2 - 2
3 of 10
www.diodes.com
October 2010
© Diodes Incorporated
DMS3019SSD
Electrical Characteristics – Q1
@ T A = 25°C unless otherwise stated
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V V
GS
= 0V, I
D
= 1mA
Zero Gate Voltage Drain Current I DSS
- - 0.1 mA V DS = 30V, V GS = 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.0 - 2.4 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R DS (ON)
-
10
12 15
18
mΩ
V
GS
= 10V, I
D
= 9A
V
GS
= 4.5V, I
D
= 7A
Forward Transfer Admittance |Y fs | - 5 - S V DS = 5V, I D = 9A
Diode Forward Voltage V
SD
- 0.4 1 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C iss
- 1932 -
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 154 -
Reverse Transfer Capacitance C
rss
- 121 -
Gate Resistance R g
- 2.7 - Ω V DS = 0V, V GS = 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
- 18.1 -
nC
V
DS
= 15V, V
GS
= 4.5V, I
D
= 9A
Total Gate Charge (V
GS
= 10V) Q
g
- 42.0 -
V DS = 15V, V GS = 10V, I D = 9A Gate-Source Charge Q gs
- 4.5 -
Gate-Drain Charge Q
gd
- 4.0 -
Turn-On Delay Time t
D(on)
- 6.16 -
ns
V
GS
= 10V, V
DS
= 15V,
R
G
= 3 Ω, R
L
= 1.7 Ω
Turn-On Rise Time t
r
- 7.22 -
Turn-Off Delay Time t
D(off)
- 36.76 -
Turn-Off Fall Time t
f
- 5.38 -
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
0 0.5 1 1.5 2
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
10
15
20
25
30
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
5
V = 2.0V
GS
V = 2.2V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 3.5V
GS
V = 4.5V
GS
V = 4.0V
GS
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
0 1 1.5 2 2.5 3 0.5
0
5
10
15
20
25
30
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
V = 85°C
GS
V = 125°C
GS
V = 25°C
GS
V = -55°C
GS
V = 150°C
GS
V = 5V
DS