Diodes DMS3019SSD User Manual
Dms3019ssd, Features, Mechanical data
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
1 of 10
October 2010
© Diodes Incorporated
DMS3019SSD
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
•
DIOFET utilize a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
• Low
R
DS(on)
– minimizes conduction loss
• Low
V
SD
– reducing the losses due to body diode
construction
• Low
Q
rr
– lower Q
rr
of the integrated Schottky reduces body
diode switching losses
•
Low gate capacitance (Q
g
/Q
gs
) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
•
Avalanche rugged – I
AR
and E
AR
rated
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
SO-8
•
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram Below
•
Weight: 0.072 grams (approximate)
Ordering Information
(Note 3)
Part Number
Case
Packaging
DMS3019SSD-13
SO-8
2500 / Tape & Reel
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our webs3. For packaging details, go to our website at
Marking Information
D2
S2/D1
G2
S1
S2/D1
S2/D1
D2
G1
Top View
Top View
Internal Schematic
Top View
Logo
Part no.
Year: “09” = 2009
Week: 01 ~ 53
1
4
8
5
S3019SD
YY WW
D
1
S
1
G
1
D
2
S
2
G
2
N-Channel MOSFET
N-Channel MOSFET +
Integrated Schottky Diode
Q1
Q2