Diodes DMS3015SSS - Manual (Page 3)

DMS3015SSS
Document number: DS32096 Rev. 4 - 2
3 of 6
www.diodes.com
September 2010
© Diodes Incorporated
DMS3015SSS
NEW PROD
UC
T
0 5 10 15 20 25 30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , D RAIN -SOURCE CURRENT (A)
D
0
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
R
,
D
RA
IN
-S
O
URCE
O
N
-RE
S
IS
T
A
NCE
(
)
DS
(O
N)
Ω
V = 4.5V
GS
V = 10V
GS
0
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
0 5 10 15 20 25 30
I , DRAIN CU RREN T (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
R
, D
RA
IN
-S
O
UR
CE
O
N-
R
E
S
IS
T
A
NCE
(
)
DS
(O
N
)
Ω
V = 4.5V
GS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATU RE (°C)
J
R
, DRA
IN-
S
O
U
RCE
O
N-
R
E
S
IS
T
A
NCE
(
NO
R
M
A
L
IZ
E
D)
DS
(O
N)
V = 10V
I = 10A
GS
D
V = 4.5V
I = 5A
GS
D
0
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATUR E (°C)
J
R
,
DR
A
IN
-S
O
U
RCE
O
N-
R
E
S
IS
T
A
NCE
(
)
DS
(O
N
)
Ω
V = 10V
I = 10A
GS
D
V = 4.5V
I = 5A
GS
D
0.5
1.0
1.5
2.0
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125
T , AMBIENT TEMPERATU RE (°C)
A
V
,
G
A
T
E T
H
R
E
S
H
O
L
D
VO
LT
AG
E (
V
)
GS
(T
H
)
I = 1mA
D
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. C urrent
0
5
10
15
20
25
30
I
, S
O
U
R
CE
C
U
RRE
N
T
(
A
)
S
T = 25°C
A