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Dms3015sss new prod uc t, Electrical characteristics, Dms3015sss – Diodes DMS3015SSS User Manual

Page 2

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DMS3015SSS

Document number: DS32096 Rev. 4 - 2

2 of 6

www.diodes.com

September 2010

© Diodes Incorporated

DMS3015SSS

NEW PROD

UC

T






Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage

BV

DSS

30 - - V

V

GS

= 0V, I

D

= 250

μA

Zero Gate Voltage Drain Current

I

DSS

- -

0.1

mA

V

DS

= 30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- -

±100

nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

V

GS(th)

1.0 1.5 2.5 V

V

DS

= V

GS

, I

D

= 250

μA

Static Drain-Source On-Resistance

R

DS (ON)

-
-

8.5
9.5

11.9
14.9

V

GS

= 10V, I

D

= 11A

V

GS

= 4.5V, I

D

= 8.8A

Forward Transfer Admittance

|Y

fs

|

- 18 - S

V

DS

= 5V, I

D

= 10A

Diode Forward Voltage

V

SD

- 0.45

0.55 V

V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance

C

iss

- 1276 - pF

V

DS

= 15V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

- 160 - pF

Reverse Transfer Capacitance

C

rss

- 136 - pF

Gate Resistance

R

g

0.3 1.48 2.7

Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge (V

GS

= 4.5V)

Q

g

- 14.3 - nC

V

DS

= 15V, V

GS

= 4.5V, I

D

= 8.8A

Total Gate Charge (V

GS

= 10V)

Q

g

- 30.6 - nC

V

DS

= 15V, V

GS

= 10V, I

D

= 8.8A

Gate-Source Charge

Q

gs

- 3.4 - nC

Gate-Drain Charge

Q

gd

- 4.3 - nC

Turn-On Delay Time

t

D(on)

- 15.8 - ns

V

GS

= 4.5V, V

DS

= 15V,

R

G

= 1.8

Ω, I

D

=8.8A

Turn-On Rise Time

t

r

- 27.8 - ns

Turn-Off Delay Time

t

D(off)

- 29.7 - ns

Turn-Off Fall Time

t

f

- 13.6 - ns

Notes:

6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.







0

0.5

1.0

1.5

2.0

Fig. 1 Typical Output C haracteristics

V

, DRAIN -SOURCE VOLTAGE (V)

DS

0

5

10

15

30

I

, DR

A

IN

C

URRE

NT

(

A

)

D

20

25

V

= 2.0V

GS

V

= 2.5V

GS

V

= 3.0V

GS

V

= 3.5V

GS

V

= 4. 0V

GS

V

= 4. 5V

GS

0

5

10

15

20

25

30

0

1

2

3

4

Fig. 2 Typical Transfer Characteristics

V

, GATE SOURCE VOLTAGE (V)

GS

I

, D

RA

IN

CURRE

NT

(

A

)

D

V

= 5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A