Diodes DMG4710SSS User Manual
Dmg4710sss, Product summary, Features
DMG4710SSS
Document number: DS32055 Rev. 6 - 2
1 of 6
November 2010
© Diodes Incorporated
DMG4710SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Product Summary
V
(BR)DSS
R
DS(on)
I
D
max
T
A
= 25°C (Note 5)
30V
12.5m
Ω @ V
GS
= 10V
11.7A
14.8m
Ω @ V
GS
= 4.5V
10.8A
Features
•
DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
• Low
R
DS(ON)
- minimizes conduction losses
• Low
V
SD
- reducing the losses due to body diode conduction
• Low
Q
rr
- lower Q
rr
of the integrated Schottky reduces body
diode switching losses
•
Low gate capacitance (Q
g
/Q
gs
) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
•
Avalanche rugged – I
AR
and E
AR
rated
•
Lead Free, RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC
Converters
•
Power management functions
Mechanical Data
• Case:
SO-8
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram Below
•
Weight: 0.072 grams (approximate)
Ordering Information
(Note 3)
Part Number
Case
Packaging
DMG4710SSS-13
SO-8
2500 / Tape & Reel
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our w3. For packaging details, go to our website at
Marking Information
Top View
Top View
Internal Schematic
S
D
D
G
D
D
S
S
Logo
Part no.
Year: “09” = 2009
Xth week: 01 ~ 53
1
4
8
5
G4710SS
YY WW
Year: “10” = 2010