Diodes DMG1029SV - Manual (Page 7)

DMG1029SV
Document number: DS35421 Rev. 3 - 2
7 of 9
www.diodes.com
August 2013
© Diodes Incorporated
DMG1029SV
NEW PROD
UC
T
0
1
2
3
4
5
6
7
8
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J

Fig. 15 On-Resistance Variation with Temperature
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
TAN
C
E (
)
D
S
(on)

V = 5V
I = A
GS
D
-
-500m
V = -10V
I = A
GS
D
-500m
0.8
1.2
1.4
1.6
1.8
1.0
2.0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 16 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS(
T
H
)
-I = 1mA
D
-I = 250µA
D
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.3 0.6 0.9 1.2 1.5
0
-I
, S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 17 Diode Forward Voltage vs. Current
SD
T = 25 C
A

T = -55 C
A

T = 85 C
A
 T = 125 C
A

T = 150 C
A

1
10
100
0 5 10 15 20 25 30 35 40
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
pF
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 18 Typical Junction Capacitance
DS
C
oss
C
rss
f = 1MHz
C
iss
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
2
4
6
8
10
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
Q , TOTAL GATE CHARGE (nC)
Fig. 19 Gate-Charge Characteristics
g
V = -10V
I = -500mA
DS
D