Diodes DMG1029SV - Manual (Page 4)

DMG1029SV
Document number: DS35421 Rev. 3 - 2
4 of 9
www.diodes.com
August 2013
© Diodes Incorporated
DMG1029SV
NEW PROD
UC
T
N-CHANNEL – Q1
V , DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 1 2 3 4 5
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
0 1 2 3 4 5
1.0
0
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
T = -55 C
A

T = 25 C
A

T = 85 C
A

T = 125 C
A

T = 150 C
A

I , DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
,D
R
AI
N-
S
O
U
R
CE
O
N-
R
ES
IS
TA
NCE(
)
DS
(O
N
)

0.1
1.0
10
0 0.2 0.4 0.6 0.8 1.0
I , DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AI
N-
S
O
U
R
CE
O
N-
R
E
S
IST
A
NCE
(
)
DS
(O
N)

0.1
1
10
0 0.2 0.4 0.6 0.8 1.0
V = 5.0V
GS
T = -55 C
A

T = 25 C
A

T = 85 C
A

T = 125 C
A

T = 150 C
A

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J

Fig. 5 On-Resistance Variation with Temperature
R
, DRA
IN-
S
OURCE
ON-
R
ES
IST
A
NCE
(
)
DS
(O
N)

0.5
1.5
2.5
1.0
2.0
3.0
0
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 6 Static Drain-Source On-Resistance vs.
Gate-Source Voltage
R
, DRAI
N
-S
OURCE
O
N
-R
ESIS
TANCE
(
)
DS
(O
N)

0
1
2
3
4
5
6
7
0 4 8 12 16 20
I =150mA
D
I =300mA
D