Diodes DMC4050SSD - Manual (Page 4)

DMC4050SSD
Document number: DS33310 Rev. 2 - 2
4 of 11
www.diodes.com
March 2011
© Diodes Incorporated
DMC4050SSD
A Product Line of
Diodes Incorporated
Electrical Characteristics N-CHANNEL
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV DSS
40 - - V V GS = 0V, I D = 250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1.0 μA
V
DS
= 40V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
0.8 1.3 1.8 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
20
33 45
60
mΩ
V
GS
= 10V, I
D
= 3A
V GS = 4.5V, I D = 3A
Forward Transfer Admittance |Y
fs
| - 12.6 - S V
DS
= 5V, I
D
= 3A
Diode Forward Voltage (Note 8) V
SD
- 0.7 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
- 1790.8 - pF
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 160.6 - pF
Reverse Transfer Capacitance C
rss
- 120.5 - pF
Gate Resistance R
g
- 1.03 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
- 37.56 - nC
V
GS
= 10V, V
DS
= 20V,
I D = 3A
Gate-Source Charge Q gs
- 7.8 - nC
Gate-Drain Charge Q
gd
- 6.6 - nC
Turn-On Delay Time t
D(on)
- 8.08 - ns
V
GS
= 10V, V
DS
= 20V,
I
D
= 3A
Turn-On Rise Time t
r
- 15.14 - ns
Turn-Off Delay Time t
D(off)
- 24.29 - ns
Turn-Off Fall Time t
f
- 5.27 - ns
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
0
5
10
15
20
25
30
0 0.5 1 1.5 2
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A)
D
V = 3.5V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.0V
GS
V = 4.5V
GS
V = 8.0V
GS
0
5
10
15
20
25
30
0 1 2 3 4 5
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS