Electrical characteristics p-channel q1, N-channel q2, Dmc4029ssd – Diodes DMC4029SSD User Manual
Page 3
DMC4029SSD
Document number: DS36350 Rev. 3 - 2
3 of 8
March 2014
© Diodes Incorporated
DMC4029SSD
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Electrical Characteristics P-Channel Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-40
⎯
⎯
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
-1 µA
V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-1.0
⎯
-3.0 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS(ON)
⎯
33 45
m
Ω
V
GS
= -10V, I
D
= -5A
⎯
40 55
V
GS
= -4.5V, I
D
= -4A
Diode Forward Voltage
V
SD
⎯
-0.7 -1.0 V
V
GS
= 0V, I
S
= -1.0A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯
1154
⎯
pF
V
DS
= -20V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
84
⎯
Reverse Transfer Capacitance
C
rss
⎯
66
⎯
Gate Resistance
R
G
⎯
12.6
⎯
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V)
Q
g
⎯
10.6
⎯
nC
V
DS
= -20V, I
D
= -4.9A
Total Gate Charge (V
GS
= -10V)
Q
g
⎯
21.5
⎯
Gate-Source Charge
Q
gs
⎯
2.2
⎯
Gate-Drain Charge
Q
gd
⎯
3.3
⎯
Turn-On Delay Time
t
D(on)
⎯
8.7
⎯
nS
V
DS
= -20V, I
D
= -3.9A
V
GS
= -4.5V, R
G
= 1
Ω
Turn-On Rise Time
t
r
⎯
19.6
⎯
Turn-Off Delay Time
t
D(off)
⎯
34.9
⎯
Turn-Off Fall Time
t
f
⎯
25.5
⎯
Body Diode Reverse Recovery Time
t
rr
⎯
9.61
⎯
nS
I
S
= -3.9A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Q
rr
⎯
3.3
⎯
nC
I
S
= -3.9A, dI/dt = 100A/μs
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
N-Channel Q2
0.0
5.0
10.0
15.0
20.0
0
1
2
3
4
5
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
V
= 2.5V
GS
V
= 3.0V
GS
V
= 3.5V
GS
V
= 4.5V
GS
V
= 10V
GS
V
= 5.0V
GS
V
= 4.0V
GS
0 0.5
1 1.5
2 2.5
3 3.5
4 4.5
5
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I,
D
R
AI
N
C
U
R
R
ENT (
A
)
D
V
= 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A