Diodes DMC3028LSD - Manual (Page 7)

DMC3028LSD
Document Revision: 4
7 of 11
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July 2009
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Diodes Incorporated
DMC3028LSD
Electrical Characteristics – Q2 P-Channel
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
-30 ⎯ ⎯ V I
D
= -250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -0.5 μA V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage V
GS(th)
-1.0 ⎯ -3.0 V I
D
= -250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8) R
DS (ON)
⎯ ⎯
0.025
Ω
V
GS
= -10V, I
D
= -7.1A
0.041 V GS = -4.5V, I D = -5.5A
Forward Transconductance (Notes 8 & 9) g
fs
⎯ 18.6 ⎯ S V
DS
= -15V, I
D
= -7.1A
Diode Forward Voltage (Note 8) V
SD
⎯ -0.80 -1.2 V I
S
= -1.7A, V
GS
= 0V
Reverse recovery time (Note 9) t
rr
16.2 ⎯ ns
I
S
= -2.2A, di/dt= 100A/
μs
Reverse recovery charge (Note 9) Q
rr
⎯ 10 ⎯ nC
DYNAMIC CHARACTERISTICS ( Note 9 )
Input Capacitance C
iss
⎯ 1678 ⎯ pF
V DS = -15V, V GS = 0V
f= 1MHz
Output Capacitance C oss
⎯ 303 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 178 ⎯ pF
Total Gate Charge Q
g
⎯ 16.4 ⎯ nC
V
DS
= -15V, V
GS
= -4.5V
I
D
= -7.1A
Total Gate Charge Q g
⎯ 31.6 ⎯ nC
V
DS
= -15V, V
GS
= -10V
I
D
= -7.1A
Gate-Source Charge Q
gs
⎯ 4.3 ⎯ nC
Gate-Drain Charge Q
gd
⎯ 6.2 ⎯ nC
Turn-On Delay Time (Note 10) t
D(on)
⎯ 3.5 ⎯ ns
V DD = -15V, V GS = -10V
I
D
= -1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 10) t
r
⎯ 4.9 ⎯ ns
Turn-Off Delay Time (Note 10) t D(off)
⎯ 44 ⎯ ns
Turn-Off Fall Time (Note 10) t
f
⎯ 28 ⎯ ns
Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.