Diodes DMC3028LSD - Manual (Page 2)

DMC3028LSD
Document Revision: 4
2 of 11
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMC3028LSD
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Units
Drain-Source Voltage V
DSS
30 -30 V
Gate-Source Voltage V
GSS
±20 ±20 V
Continuous Drain Current V GS = 10V
(Notes 3 & 5)
I D
7.1 -7.4
A
T
A
= 70°C (Notes 3 & 5) 5.7 -5.9
(Notes 2 & 5) 5.5 -5.8
(Notes 2 & 6) 6.6 -6.8
Pulsed Drain Current V
GS
= 10V (Notes 4 & 5) I
DM
34 -36 A
Continuous Source Current (Body diode) (Notes 3 & 5) I S
3.5 -3.5 A
Pulsed Source Current (Body diode) (Notes 4 & 5) I
SM
34 -36 A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit
Power Dissipation
Linear Derating Factor
(Notes 2 & 5) P
D
1.3
10
W
mW/
°C
Power Dissipation
Linear Derating Factor
(Notes 2 & 6) P
D
1.8
14
W
mW/ °C
Power Dissipation
Linear Derating Factor
(Notes 3 & 5) P D
2.1
17
W
mW/
°C
Thermal Resistance, Junction to Ambient
(Notes 2 & 5)
(Notes 2 & 6)
(Notes 3 & 5)
R θJA
100
70
60 °C/W
Thermal Resistance, Junction to Lead (Notes 5 & 7) R θJL 51 46 °C/W
Operating and Storage Temperature Range T J, T STG
-55 to +150 °C
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t
≤ 10 sec.
4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. For a dual device with one active die.
6. For a device with two active die running at equal power.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).