Diodes DMC3018LSD - Manual (Page 3)

DMC3018LSD
Document number: DS31310 Rev. 9 - 2
3 of 8
www.diodes.com
February 2014
© Diodes Incorporated
DMC3018LSD
NEW PROD
UC
T
Electrical Characteristics P-CHANNEL – Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30 ⎯ ⎯ V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1.0 µA V
DS
= -24V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ± 100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1 -1.7 -2.1 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
⎯ 35 45
m Ω
V
GS
= -10V, I
D
= -6A
⎯ 56 65 V
GS
= -4.5V, I
D
= -5.0A
Forward Transfer Admittance |Y
fs
| ⎯ 8.2 ⎯ S V
DS
=-5V, I
D
= -6A
Diode Forward Voltage (Note 7) V
SD
-0.5 ⎯ -1.2 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ 722 ⎯ pF
V
DS
= -15V, V
GS
= 0V, f = 1.0MHz Output Capacitance C
oss
⎯ 114 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 92 ⎯ pF
Gate Resistance R
G
⎯ 1.9 ⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge Q
g
⎯
7.0
13.7
⎯
nC
V
DS
= -15V, V
GS
= -4.5V, I
D
= -6A
V
DS
= -15V, V
GS
= -10V, I
D
= -6A
Gate-Source Charge Q
gs
⎯ 1.7 ⎯ V
DS
= -15V, V
GS
= -4.5V, I
D
= -6A
Gate-Drain Charge Q
gd
⎯ 4.1 ⎯ V
DS
= -15V, V
GS
= -4.5V, I
D
= -6A