Diodes DMC2020USD - Manual (Page 7)

DMC2020USD
Document number: DS32121 Rev. 4 - 2
7 of 11
www.diodes.com
February 2011
© Diodes Incorporated
DMC2020USD
A Product Line of
Diodes Incorporated
Electrical Characteristics – Q2 P-CHANNEL
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-20 - - V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current I DSS
- - -1.0 μA
V DS = -20V, V GS = 0V
Gate-Source Leakage I
GSS
- - ±10 μA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.4 -0.7 -1.0 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance (Note 11) R
DS (ON)
-
26 33
m Ω
V
GS
= -4.5V, I
D
= -6A
33 45 V
GS
= -2.5V, I
D
= -3A
Forward Transfer Admittance (Note 11 & 12) |Y
fs
| - 14 - S V
DS
= -5V, I
D
= -4A
Diode Forward Voltage (Note 11) V
SD
- -0.7 -1.0 V V
GS
= 0V, I
S
= -1A
Continuous Source Current I
S
- - -1.8 A -
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
C
iss
- 1610 -
pF
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 157 -
Reverse Transfer Capacitance C
rss
- 145 -
Gate Resistance R
g
- 9.45 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (Note 13) Q
g
- 8.0 -
nC
V
GS
= -2.5V
V
DS
= -10V
I
D
= -4A
Total Gate Charge (Note 13) Q g
- 15.4 -
V
GS
= -4.5V Gate-Source Charge (Note 13) Q
gs
- 2.5 -
Gate-Drain Charge (Note 13) Q
gd
- 3.3 -
Turn-On Delay Time (Note 13) t D(on)
- 16.8 -
ns
V
GS
= -4.5V, V
DS
= -10V,
R G = 6 Ω , I
D = -1A
Turn-On Rise Time (Note 13) t
r
- 12.4 -
Turn-Off Delay Time (Note 13) t
D(off)
- 94.1 -
Turn-Off Fall Time (Note 13) t
f
- 42.4 -
Notes: 11. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
12. For design aid only, not subject to production testing.
13. Switching characteristics are independent of operating junction temperatures.
Typical Characteristics – Q2 P-CHANNEL
0 0.5 1.0 1.5 2.0
Fig. 12 Typical Output Characteristics
-V , DRAIN-SOURCE VOLTAGE (V)
DS
0
5
10
15
30
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
20
25
V = -1.8V
GS
V = -2.0V
GS
V = -2.5V
GS
V = -3.0V
GS
V = -3.5V
GS
V = -4.0V
GS
V = -4.5V
GS
V = -10V
GS
0
5
10
15
20
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
0 0.5 1 1.5 2 2.5 3
Fig. 13 Typical Transfer Characteristics
-V , GATE SOURCE VOLTAGE (V)
GS
V = -5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A