Diodes DMC2020USD - Manual (Page 2)

DMC2020USD
Document number: DS32121 Rev. 4 - 2
2 of 11
www.diodes.com
February 2011
© Diodes Incorporated
DMC2020USD
A Product Line of
Diodes Incorporated
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Units
Drain-Source Voltage V
DSS
20 -20
V
Gate-Source Voltage V
GSS
±10 ±10
Continuous Drain Current V GS = 4.5V
(Notes 3 & 5)
I D
8.5 -6.8
A
T
A
= 70°C (Notes 3 & 5) 6.8 -5.4
(Notes 2 & 5) 6.5 -5.2
(Notes 2 & 6) 7.8 -6.3
Pulsed Drain Current V
GS
= 4.5V (Notes 4 & 5) I
DM
33.6 -26.8
Continuous Source Current (Body diode) (Notes 3 & 5) I S
4.0 -4.0
Pulsed Source Current (Body diode) (Notes 4 & 5) I
SM
33.6 -26.8
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit
Power Dissipation
Linear Derating Factor
(Notes 2 & 5)
P
D
1.25
10
W
mW/ °C
(Notes 2 & 6)
1.8
14.3
(Notes 3 & 5)
2.14
17.2
Thermal Resistance, Junction to Ambient
(Notes 2 & 5)
R θJA
100
°C/W
(Notes 2 & 6) 70
(Notes 3 & 5) 58
Thermal Resistance, Junction to Lead (Notes 5 & 7) R θJL 51
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t
≤ 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.
5. For a dual device with one active die.
6. For a device with two active die running at equal power.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).