Diodes DMC2004VK - Manual (Page 3)

DMC2004VK
Document number: DS30925 Rev. 6 - 2
3 of 8
www.diodes.com
January 2013
© Diodes Incorporated
DMC2004VK
Electrical Characteristics P-CHANNEL – Q
2 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20 ⎯ ⎯ V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1.0 µA V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ± 1.0 µA V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.5 ⎯ -1.0 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS (ON)
⎯
0.7
1.1
1.7 0.9
1.4
2.0
Ω
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
Forward Transfer Admittance |Y
fs
| 200 ⎯ ⎯ mS V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage V
SD
-0.5 ⎯ -1.2 V V
GS
= 0V, I
S
= -115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯ ⎯ 175 pF
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ ⎯ 30 pF
Reverse Transfer Capacitance C
rss
⎯ ⎯ 20 pF
Q
1
, N-CHANNEL
0
0
V , DRAIN SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
V , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
E
S
H
O
LD
V
O
LT
A
G
E
(V
)
GS
(t
h
)
I , DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
vs. Drain Current
D