Dmc2004dwk new prod uc t, Electrical characteristics n-channel – q, Electrical characteristics p-channel – q – Diodes DMC2004DWK User Manual
Page 2
DMC2004DWK
Document number: DS31114 Rev. 4 - 2
2 of 8
www.diodes.com
September 2007
© Diodes Incorporated
DMC2004DWK
NEW PROD
UC
T
Electrical Characteristics N-CHANNEL – Q
1
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV
DSS
20
⎯
⎯
V
V
GS
= 0V, I
D
= 10
μA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
1
μA
V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
± 1
μA
V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(th)
0.5
⎯
1.0 V
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
⎯
0.4
0.5
0.7
0.55
0.70
0.90
Ω
V
GS
= 4.5V, I
D
= 540mA
V
GS
= 2.5V, I
D
= 500mA
V
GS
= 1.8V, I
D
= 350mA
Forward Transfer Admittance
|Y
fs
|
200
⎯
⎯
mS
V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage (Note 4)
V
SD
0.5
⎯
1.2 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
⎯
150 pF
Output Capacitance
C
oss
⎯
⎯
25 pF
Reverse Transfer Capacitance
C
rss
⎯
⎯
20 pF
V
DS
= 16V, V
GS
= 0V
f = 1.0MHz
Electrical Characteristics P-CHANNEL – Q
2
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV
DSS
-20
⎯
⎯
V
V
GS
= 0V, I
D
= -250
μA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
-1.0
μA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
± 1.0
μA
V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(th)
-0.5
⎯
-1.0 V
V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
0.7
1.1
1.7
0.9
1.4
2.0
Ω
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
Forward Transfer Admittance
|Y
fs
|
200
⎯
⎯
mS
V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage (Note 4)
V
SD
-0.5
⎯
-1.2 V
V
GS
= 0V, I
S
= -115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
⎯
175 pF
Output Capacitance
C
oss
⎯
⎯
30 pF
Reverse Transfer Capacitance
C
rss
⎯
⎯
20 pF
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Notes:
4. Short duration pulse test used to minimize self-heating effect.