Diodes DMP10H400SK3 - Manual (Page 4)

DMP10H400SK3
Document number: DS35932 Rev. 4 - 2
4 of 6
www.diodes.com
December 2013
© Diodes Incorporated
DMP10H400SK3
NEW PROD
UC
T
0.05
0.15
0.25
0.35
0.45
0
0.10
0.20
0.30
0.40
0.50
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J

Fig. 7 On-Resistance Variation with Temperature
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
TAN
C
E (
)
D
S
(on)

V = -10V
I = A
GS
D
-10
V = 5V
I = A
GS
D
-4.
-5
0.5
1.5
2.5
1.0
2.0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
L
D
V
O
LT
A
G
E (
V
)
GS
(T
H
)
-I = 1mA
D
-I = 250µA
D
0
1
2
3
4
5
6
7
8
9
0 0.3 0.6 0.9 1.2 1.5
10
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S T = 25 C
A

T = -55 C
A

T = 85 C
A

T = 125 C
A

T = 150 C
A

0 5 10 15 20 25 30 35 40
10
1,000
10,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
DS
C
oss
C
rss
f = 1MHz
C
iss
0
1
2
3
4
5
6
7
8
9
0 2 4 6 8 10 12 14 16 18
10
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
g
V = -60V
I = -5A
DS
D