Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMP6180SK3 User Manual
Page 2
DMP6180SK3
Document number: DS36172 Rev. 3 - 2
2 of 6
July 2013
© Diodes Incorporated
DMP6180SK3
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-60 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= -10V
Steady
State
T
C
= +25°C
T
C
= +100°C
I
D
-14
-10
A
Maximum Body Diode Forward Current (Note 6)
I
S
4.1 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
25 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.7
W
T
A
= +70°C
1.0
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
76
°C/W
t<10s 33
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.7
W
T
A
= +70°C
1.5
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
JA
50
°C/W
t<10s 24
Total Power Dissipation (Note 6)
T
C
= +25°C
P
D
40
W
T
C
= +100°C
16
Thermal Resistance, Junction to Case (Note 6)
Steady state
R
JC
3.1 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-60
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
-1 µA
V
DS
= -48V, V
GS
= 0V
Gate-Source Leakage
I
GSS
100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1.2
-2.7 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS (ON)
60 110
m
Ω
V
GS
= -10V, I
D
= -12A
80 140
V
GS
= -4.5V, I
D
=-8A
Forward Transfer Admittance
|Y
fs
|
15
S
V
DS
= -5V, I
D
= -12A
Diode Forward Voltage
V
SD
-0.7 -1.0 V
V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
984.7
pF
V
DS
= -30V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
58
Reverse Transfer Capacitance
C
rss
45.5
Gate Resistance
R
G
12.9
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V)
Q
g
8.1
nC
V
DS
= -30V, I
D
= -12A
Total Gate Charge (V
GS
= -10V)
Q
g
17.1
Gate-Source Charge
Q
gs
3.2
Gate-Drain Charge
Q
gd
3.9
Turn-On Delay Time
t
D(on)
5.9
ns
V
GS
= -10V, V
DS
= -30V, R
GEN
= 3
Ω,
R
L
= 2.5
Ω
Turn-On Rise Time
t
r
21.2
Turn-Off Delay Time
t
D(off)
30.9
Turn-Off Fall Time
t
f
39.1
Body Diode Reverse Recovery Time
t
rr
19.9
ns
I
S
= -12A, dI/dt = 100A/
μs
Body Diode Reverse Recovery Charge
Q
rr
1.7
nC
I
S
= -12A, dI/dt = 100A/
μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing