Dmp58d0lfb – Diodes DMP58D0LFB User Manual
Page 4
DMP58D0LFB
Document number: DS35206 Rev. 6 - 2
4 of 6
September 2012
© Diodes Incorporated
DMP58D0LFB
T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V)
GS
(T
H
)
I = 250µA
D
0
0.5
1
1.5
2
2.5
-50
-25
0
25
50
75
100
125
I = 1mA
D
150
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
0
0.05
0.1
0.15
0.2
0.25
0.3
0.4
0.6
0.8
1
1.2
T = 25°C
A
-I
,
L
E
A
KAGE CU
RRENT
(
n
A)
DS
S
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
1
10
100
0
5
10
15
20
25
30
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Junction Capacitance
C
,
C
A
P
A
C
IT
AN
C
E (
p
F)
T
0
5
10
15
20
25
30
35
-20
-16
-12
-8
-4
0
f = 1MHz
C
ISS
C
OSS
C
RSS
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 11 SOA, Safe Operation Area
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0.001
0.01
0.1
1
0.1
1
10
100
-I (A) @P =10s
D
W
-I (A) @ DC
D
-I (A) @P =1s
D
W
-I (A) @P =100ms
D
W
-I (A) @P =10ms
D
W
T
= 150 C
T = 25 C
Single Pulse
J(MAX)
A
°
°
R
Limited
DS(ON)
-I (A) @P =1ms
D
W
-I (A) @
P =10µs
D
W
-I (A) @P =100µs
D
W