Diodes DMP58D0LFB User Manual
Dmp58d0lfb, Product summary, Description

DMP58D0LFB
Document number: DS35206 Rev. 6 - 2
1 of 6
September 2012
© Diodes Incorporated
DMP58D0LFB
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
Package
I
D
T
A
= +25°C
-50V
8
Ω @ V
GS
= -5V
X1-DFN1006-3 -310A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• DC-DC
Converters
•
Power management functions
•
Battery Operated Systems and Solid-State Relays
•
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Features
• Low
On-Resistance
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
ESD Protected 1kV
•
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
X1-DFN1006-3
•
Case Material: Molded Plastic, "Green" Molding Compound.
•
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Weight: 0.001 grams (approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMP58D0LFB-7
X1-DFN1006-3
3,000 / Tape & Reel
DMP58D0LFB-7B
X1-DFN1006-3
10,000 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. S
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
X1-DFN1006-3
Bottom View
Top View
Pin-Out
Equivalent Circuit
ESD PROTECTED
D
S
G
Source
Gate
Protection
Diode
Gate
Drain
NZ = Product Type Marking Code
NZ
Top View
Dot Denotes Drain Side
Top View
Bar Denotes Gate
and Source Side
DMP58D0LFB-7 DMP58D0LFB-7B
NZ