Dmp32d4sfb – Diodes DMP32D4SFB User Manual
Page 4
DMP32D4SFB
Document number: DS36161 Rev. 2 - 2
4 of 6
March 2013
© Diodes Incorporated
DMP32D4SFB
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
0.3
0.6
0.9
1.2
0
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ES
IS
TAN
C
E (
)
D
S
(on)
-50 -25
0
25
50
75
100 125
150
T , JUNCTION TEMPERATURE ( C)
J
Figure 7 On-Resistance Variation with Temperature
V
= -10V
I =
A
GS
D
-300m
V
=
5V
I =
A
GS
D
-4.
-200m
1.2
1.4
1.6
1.8
2.2
2.0
-50 -25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(T
H
)
-I = 1mA
D
-I = 250µA
D
0.2
0.4
0.6
0.8
0
0.3
0.6
0.9
1.2
1.5
1.0
0
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25 C
A
T = -55 C
A
T = 85 C
A
T = 125 C
A
T = 150 C
A
100
10
1
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
0
5
10
15
20
25
30
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
DS
C
oss
C
rss
f = 1MHz
C
iss
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Q , TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
g
0
2
4
6
8
-V
, G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
10
V
= -10V
I = -200mA
DS
D