Diodes DMP31D0UFB4 - Manual (Page 2)

DMP31D0UFB4
D atasheet number: DS35587 Rev. 1 - 2
2 of 7
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January 2012
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DMP31D0UFB4
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current
Steady
State
T
A
= 25°C (Note 5)
T
A
= 85°C (Note 5)
T
A
= 25°C (Note 4)
I
D
-0.76
-0.55
-0.54
A
Pulsed Drain Current (Note 5) I
DM
2 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation
(Note 4)
P
D
0.46
W
(Note 5) 0.92
Thermal Resistance, Junction to Ambient
(Note 4)
R θJA
271
°C/W
(Note 5) 136
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6. Device mounted on minimum recommended pad layout test board, 10
μs pulse duty cycle = 1%.
0
1
2
3
4
5
6
7
8
9
10
0.001 0.01 0.1 1 10 100 1,000
P
,
P
EAK
T
R
ANSI
E
N
T
P
O
IW
E
R
(W
)
(P
K
)
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
Single Pulse
R
= 262 C/W
R = r * R
T - T = P * R
θ
θ
θ
θ
JA
JA(t) (t) JA
J A JA(t)
°
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
0.001
0.01
0.1
r(t),
T
R
ANSI
EN
T
T
H
E
R
MAL
R
ESI
S
T
AN
C
E
1
R (t) = r(t) * R θ θ JA JA
R = 262°C/W
Duty Cycle, D = t1/ t2
θJA
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
t1, PULSE DURATION TIMES (sec)
Fig. 2 Transient Thermal Resistance