Diodes DMP31D0U - Manual (Page 2)

DMP31D0U
D atasheet number: DS35754 Rev. 1 - 2
2 of 7
www.diodes.com
February 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP31D0U
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current
Steady
State
T
A
= 25°C (Note 5)
T A = 85°C (Note 5)
T
A
= 25°C (Note 4)
I D
-0.67
-0.48
-0.53
A
Pulsed Drain Current (Note 6) I
DM
2.5 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation
(Note 4)
P
D
0.45 W
(Note 5) 0.71 W
Thermal Resistance, Junction to Ambient
(Note 4)
R θJA
275 °C/W
(Note 5) 177 °C/W
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper
6. Device mounted on minimum recommended pad layout test board, 10
μs pulse duty cycle = 1%.
0.001 0.01 0.1 1 10 100 1,000
T1, PULSE DURATION SECTION (sec)
Fig. 1 Single Maximum Power Dissipation
0
10
20
30
40
50
60
70
80
90
100
P
(p
k
),
P
EA
K
T
R
A
N
SI
E
N
T
P
O
WE
R
(W
)
Single Pulse
Rthja = 176C/W
Rthja(t) = Rthja*r(t)
T - T = P*Rthja (t)
J A
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
R (t) = r(t)*R
R = 176C/W
Duty Cycle, D = t1/t2
θ θ
θ
JA JA
JA
t1, PULSE DURATION TIME (sec)
Fig. 2 Transient Thermal Resistance
0.001
0.01
0.1
1
R(
t)
, T
R
ANSI
ENT T
H
ERM
A
L
RESI
S
IT
A
NCE
r(t) @ D=Single Pulse
r(t) @ D=0.005
r(t) @ D=0.01
r(t) @ D=0.01
r(t) @ D=0.05
r(t) @ D=0.1
r(t) @ D=0.3
r(t) @ D=0.5
r(t) @ D=0.7
r(t) @ D=0.9