Dmp3098lsd new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMP3098LSD User Manual
Page 2: Electrical characteristics, Dmp3098lsd

DMP3098LSD
Document number: DS31448 Rev. 4 - 2
2 of 5
January 2014
© Diodes Incorporated
DMP3098LSD
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GSS
±20
V
Drain Current (Note 5) Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-4.4
-3.3
A
Pulsed Drain Current (Note 6)
I
DM
-15 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Total Power Dissipation (Note 5)
P
D
1.8 W
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
70 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30
⎯
⎯
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
-1 µA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1 1.7 -2.1 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS(ON)
⎯
⎯
56
98
65
115
m
Ω
V
GS
= -10V, I
D
= -5.0A
V
GS
= -4.5V, I
D
= -4.0A
Forward Transconductance
g
fs
⎯
5.2
⎯
S
V
DS
= -10V, I
D
= -5.0A
Diode Forward Voltage (Note 7)
V
SD
-0.5
⎯
-1.2 V
V
GS
= 0V, I
S
= -2.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
336
⎯
pF
V
DS
= -25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
70
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
49
⎯
pF
Gate Resistance
R
G
⎯
4.6
⎯
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
g
⎯
4.0
7.8
⎯
nC
V
DS
= -15V, V
GS
= -4.5V,I
D
= -5.0A
V
DS
= -15V, V
GS
= -10V,I
D
= -5.0A
Gate-Source Charge
Q
gs
⎯
1.0
⎯
V
DS
= -15V, V
GS
= -4.5V,I
D
= -5.0A
Gate-Drain Charge
Q
gd
⎯
2.5
⎯
V
DS
= -15V, V
GS
= -4.5V,I
D
= -5.0A
Turn-On Delay Time
t
d(on)
⎯
6.0
⎯
ns
V
DS
= -15V, V
GS
= -10V,
I
D
= -1A, R
G
= 6.0
Ω
Rise Time
t
r
⎯
5.0
⎯
Turn-Off Delay Time
t
d(off)
⎯
17.6
⎯
Fall Time
t
f
⎯
9.5
⎯
Notes:
5. Device mounted on 2 oz. 1” x 1” Copper pads on 2” x 2” FR-4 PCB.
6. Pulse width
≤10µS, Duty Cycle ≤1%.
7. Short duration pulse test used to minimize self-heating effect.