Diodes DMP3065LVT - Manual (Page 4)

DMP3065LVT
Document number: DS36697 Rev. 2 - 2
4 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMP3065LVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
0.02
0.04
0.06
0.08
0.1
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 7 On-Resistance Variation with Temperature
V = -10V
I = A
GS
D
-4.9
V = 5V
I = A
GS
D
-4.
-3.7
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
ST
AN
C
E (
)
DS
(o
n
)
Ω
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(T
H
)
-I = 1mA
D
-I = 250µA
D
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
10
100
1000
10000
0 5 10 15 20 25 30
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
pF
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
DS
C
oss
C
rss
f = 1MHz
C
iss
0
2
4
6
8
10
0 2 4 6 8 10 12 14
Q , TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
g
V,
G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
V = 15V
I = 4.9A
DS
D