Diodes DMP3056LDM - Manual (Page 2)

DMP3056LDM
Document number: DS31449 Rev. 11 - 2
2 of 6
www.diodes.com
December 2012
© Diodes Incorporated
DMP3056LDM
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±20
V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady State T
A
= +25 °C I
D
-4.3 A
t < 10s T
A
= +25
°C
I
D
-5.8 A
Maximum Continuous Body Diode Forward Current (Note 6) I
S
-2.3 A
Pulsed Drain Current (10 μs pulse, duty cycle = 1%) I
DM
-13 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) T
A
= +25°C P
D
1.25 W
Thermal Resistance, Junction to Ambient (Note 5) Steady State R θJA 100 °C/W
Total Power Dissipation (Note 6) T
A
= +25°C P
D
1.5 W
Thermal Resistance, Junction to Ambient (Note 6) Steady State R θJA 86
°C/W
Thermal Resistance, Junction to Case R θJC 15.6
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
STATIC PARAMETERS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
-30 ⎯ ⎯ V V GS = 0V, I D = -250
μA
Zero Gate Voltage Drain Current T
J
= +25
°C I
DSS
⎯ ⎯ -1 μA
V
GS
= 0V, V
DS
= -30V
Gate-Body Leakage Current I
GSS
⎯ ⎯
±100
±800
nA
V
GS
= ±20V, V
DS
= 0V
V
GS
= ±25V, V
DS
= 0V
Gate Threshold Voltage V GS(th)
-1.0 ⎯ -2.1 V V GS = V DS , I D = -250
μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
⎯
⎯ 45
65
m
Ω
V
GS
= -10V, I
D
= -5A
V
GS
= -4.5V, I
D
= -4.2A
Forward Transconductance g
FS
⎯ 8 ⎯ S V
DS
= -10V, I
D
= -4.3A
Diode Forward Voltage V SD
⎯ ⎯ -1.2 V V GS = 0V, I S = -1.7A
DYNAMIC PARAMETERS (Note 8)
Input Capacitance
C
iss
⎯ 948 ⎯ pF
V GS = 0V, V DS = -25V,
f = 1.0MHz
Output Capacitance C
oss
⎯ 105 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 100 ⎯ pF
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Q
G
⎯ 10.1 ⎯ nC
V
DS
= -15V, V
GS
= -4.5V,
I
D
= -6A
Q
G
⎯ 21.1 ⎯
nC
V DS = -15V, V GS = -10V,
I D = -6A
Gate-Source Charge Q GS
⎯ 2.8 ⎯
Gate-Drain Charge Q
GD
⎯ 3.2 ⎯
Gate Resistance R
g
⎯ 13.15 ⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Turn-On Delay Time t
d(on)
⎯ 10.2 ⎯
ns
V
DS
= -15V, V
GS
= -10V,
I
D
= -1A, R
G
= 6.0 Ω
Rise Time t
r
⎯ 6.6 ⎯
Turn-Off Delay Time t
d(off)
⎯ 50.1 ⎯
Fall Time t
f
⎯ 22.3 ⎯
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.