Dmp3010lpsq – Diodes DMP3010LPSQ User Manual
Page 4
POWERDI is a registered trademark of Diodes Incorporated.
DMP3010LPSQ
Document number: DS36683 Rev. 3 - 2
4 of 7
January 2014
© Diodes Incorporated
DMP3010LPSQ
0
0.5
1.0
1.5
2.0
2.5
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25
0
25
50
75
100 125 150
T , AMBIENT TEMPERATURE (°C)
A
-V
, G
A
TE
T
HRESHO
L
D VO
LT
A
G
E
(
V
)
GS
(T
H
)
I = -1mA
D
I = -250µA
D
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Fig. 8 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLTAGE (V)
SD
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
0
4
8
12
16
20
Fig. 9 Typical Total Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
100
1,000
10,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F)
T
C
iss
C
rss
C
oss
f = 1MHz
0
5
10
15
20
25
30
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
100,000
-I
, L
EAKA
G
E
C
U
R
R
E
N
T
(n
A)
DS
S
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
20
40
60
80
100
120 140
Q , OTAL GATE CHARGE (nC)
Fig. 11 Gate-Source Voltage vs. Total Gate Charge
g
T
0
2
4
6
8
10
-V
, A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E(
V
)
GS
G
V
= -15V
I = -10A
DS
D
0.1
1
10
100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
100
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
10
1
0.1
0.01
T
= 150°C
T = 25°C
J(max)
A
V
= -10V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
R
Limited
DS(on)