Diodes DMP3010LPSQ - Manual (Page 2)

POWERDI is a registered trademark of Diodes Incorporated.
DMP3010LPSQ
Document number: DS36683 Rev. 3 - 2
2 of 7
www.diodes.com
January 2014
© Diodes Incorporated
DMP3010LPSQ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 7) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-36
-29
A
Continuous Drain Current (Note 7) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-31
-25
A
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-14.5
-11.5
A
Pulsed Drain Current (Notes 6 & 9) I
DM
-100 A
Avalanche Current (Notes 10 & 11) I
AR
-17.5 A
Repetitive Avalanche Energy (Notes 10 & 11) L = 1mH E
AR
153 mJ
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 6) P
D
2.18 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6) R
θJA
55 °C/W
Power Dissipation (Note 7) P
D
14.37 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 7) R
θJA
8.7 °C/W
Power Dissipation (Notes 7 & 8) P
D
58.7 W
Thermal Resistance, Junction to Case @T
C
= +25°C (Notes 7 & 8) R
θJC
2.13 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 11)
Drain-Source Breakdown Voltage
BV
DSS
-30 — — V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
— — -1 μA V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 11)
Gate Threshold Voltage
V
GS(th)
-1.1 -1.6 -2.1 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS(ON)
— 5.7 7.5
mΩ
V
GS
= -10V, I
D
= -10A
— 7.2 10 V
GS
= -4.5V, I
D
= -10A
Forward Transfer Admittance |Y
fs
| — 30 — S V
DS
= -15V, I
D
= -10A
Diode Forward Voltage V
SD
— -0.65 -1 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
C
iss
— 6234 — pF
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
Output Capacitance C
oss
— 1500 — pF
Reverse Transfer Capacitance C
rss
— 774 — pF
Gate Resistance R
g
— 1.28 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -10V) Q
g
— 126.2 — nC V
DS
= -15V, I
D
= -10A
Total Gate Charge (V
GS
= -4.5V) Q
g
— 59.2 — nC
V
DS
= -15V, V
GS
= -4.5V,
I
D
= -10A
Gate-Source Charge Q
gs
— 16.1 — nC
Gate-Drain Charge Q
gd
— 15.7 — nC
Turn-On Delay Time t
D(on)
— 11.4 — ns
V
DS
= -15V, V
GEN
= -10V,
R
G
= 6Ω, I
D
= -1A
Turn-On Rise Time t
r
— 9.4 — ns
Turn-Off Delay Time t
D(off)
— 260.7 — ns
Turn-Off Fall Time t
f
— 99.3 — ns
Notes: 6. Device mounted on FR-4 PCB with 1 inch square 2 oz. Copper, single sided.
7. Device mounted on FR-4 PCB with infinite heatsink.
8. R
θJC
is guaranteed by design while R
θCA
is determined by the user’s board design.
9. Repetitive rating, pulse width limited by junction temperature, 10 s pulse, duty cycle = 1%.
10. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C.
11. Short duration pulse test used to minimize self-heating effect.
12. Guaranteed by design. Not subject to production testing.