Electrical characteristics – Diodes DMP3008SFG User Manual
Page 3
POWERDI is a registered trademark of Diodes Incorporated
DMP3008SFG
Document number: DS35598 Rev. 5 - 2
3 of 7
May 2012
© Diodes Incorporated
DMP3008SFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
0.001
0.01
0.1
r(t
),
T
R
ANS
IEN
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
1
R
(t) = r(t) * R
θ
θ
JA
JA
R
= 57°C/W
Duty Cycle, D = t1/ t2
θJA
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
Electrical Characteristics
T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30
⎯
⎯
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
-1.0
µA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1.1 -1.6 -2.1
V
V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
12.5 17
m
Ω
V
GS
= -10V, I
D
= -10A
⎯
18.5 25
V
GS
= -4.5V, I
D
= -10A
Forward Transfer Admittance
|Y
fs
|
⎯
13
⎯
S
V
DS
= -15V, I
D
= -10A
Diode Forward Voltage
V
SD
⎯
-0.7 -1.0 V
V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯
2230
⎯
pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
328
⎯
Reverse Transfer Capacitance
C
rss
⎯
294
⎯
Gate Resistance
R
G
⎯
6.4
⎯
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -10V)
Q
g
⎯
47
⎯
nC
V
DS
= -15V, I
D
= -10A
Total Gate Charge (V
GS
= -4.5V)
Q
g
⎯
23
⎯
Gate-Source Charge
Q
gs
⎯
9.4
⎯
Gate-Drain Charge
Q
gd
⎯
5.6
⎯
Turn-On Delay Time
t
D(on)
⎯
10.5
⎯
ns
V
GS
= -10V, V
DS
= -15V, R
G
= 6
Ω
Turn-On Rise Time
t
r
⎯
8.5
⎯
Turn-Off Delay Time
t
D(off)
⎯
90
⎯
Turn-Off Fall Time
t
f
⎯
40
⎯
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.