Diodes DMP3008SFG - Manual (Page 2)

POWERDI is a registered trademark of Diodes Incorporated
DMP3008SFG
Document number: DS35598 Rev. 5 - 2
2 of 7
www.diodes.com
May 2012
© Diodes Incorporated
DMP3008SFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V GSS
±20 V
Continuous Drain Current (Note 6) V GS = -10V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-8.6
-7.0
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
-11.7
-9.3
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-7.1
-5.6
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
-9.6
-7.6
A
Pulsed Drain Current (10 μs pulse, duty cycle = 1%) I DM
-80 A
Maximum Continuous Body Diode Forward Current (Note 6) I
S
-3.0 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
0.9 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
140 °C/W
t<10s 72 °C/W
Total Power Dissipation (Note 6) P
D
2.2 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R θJA
57 °C/W
t<10s 30 °C/W
Thermal Resistance, Junction to Case (Note 6) R θJC 7.1 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ
T = 150°C
T = 25°C
Single Pulse
J(max)
A
0
10
20
30
40
50
60
70
80
90
100
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
0.001 0.01 0.1 1 10 100 1,000 0.0001
Single Pulse
R
= 57 C/W
R = r * R
T - T = P * R
θ
θ
θ
θ
JA
JA(t) (t) JA
J A JA(t)
°
P
, PEA
K TRANS
IENT PO
IW
ER
(W
)
(P
K
)