Diodes DMG4435SSS - Manual (Page 4)

DMG4435SSS
Document number: DS32041 Rev. 5 - 2
4 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4435SSS
NEW PROD
UC
T
0
0.5
1.0
1.5
2.0
2.5
3.0
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
-V
, G
A
TE THRE
SHO
LD
VOL
TAG
E
(V
)
GS
(T
H
)
I = -1mA
D
I = -250µA
D
0
5
10
15
20
25
30
0 0.2 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLTAGE (V)
SD
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
10
100
1,000
10,000
0 5 10 15 20 25 30
Fig. 9 Typical Total Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
C
iss
C
rss
C
oss
f = 1MHz
0.1
10
100
1,000
10,000
-I
, L
E
AKA
G
E
C
U
R
R
EN
T
(µ
A
)
DS
S
1
0 10 20 30
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
DS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40
Q , TOTAL GATE CHARGE (nC)
g
V
, G
A
TE
-T
HRE
S
H
O
LD
VO
LT
AG
E (
V
)
GS
(T
H
)
Fig. 11 Gate Threshold Voltage vs. Total Gate Charge