Diodes DMG4407SSS - Manual (Page 4)

DMG4407SSS
Document number: DS35540 Rev. 6 - 2
4 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4407SSS
NEW PROD
UC
T
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
0
0.5
1.0
1.5
2.0
2.5
3.0
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E(
V)
GS
(T
H
)
0.4 0.6 0.8 1.0 1.2
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
0
5
10
15
20
25
30
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
100
1,000
10,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
0 5 10 15 20 25 30
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
oss
C
rss
f = 1MHz
C
iss
0 5 10 15 20 25 30
-V , DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
1
10
100
1,000
10,000
-I
, L
E
A
K
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
0 5 10 15 20 25 30 35 40 45
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
g
0
2
4
6
8
10
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (V)
GS
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ