Diodes DMG4407SSS - Manual (Page 2)

DMG4407SSS
Document number: DS35540 Rev. 6 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4407SSS
NEW PROD
UC
T
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±25 V
Continuous Drain Current (Note 6) V
GS
= -20V
Steady
State
T A = +25°C
T
A
= +70°C
I
D
-9.9
-7.9
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
-12.5
-10.0
A
Continuous Drain Current (Note 6) V
GS
= -6V
Steady
State
T A = +25°C
T A = +70°C
I D
-8.2
-6.5
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
-11.0
-8.7
A
Maximum Continuous Body Diode Forward Current (Note 6) I
S
3.0 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
-80 A
Thermal Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
1.45 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R θJA
88 °C/W
t<10s 50 °C/W
Total Power Dissipation (Note 6) P
D
1.82 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R θJA
70 °C/W
t<10s 41 °C/W
Thermal Resistance, Junction to Case (Note 6) R θJC 7.6 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-50 to 155 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30 — — V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current I
DSS
— — -1 μA V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±10 μA V
GS
= ±25V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1.7 — -3.0 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
— 9 11
m Ω
V GS = -20V, I D = 12A
— 10 13 V
GS
= -10V, I
D
= 10A
— 12.7 17 V
GS
= -6V, I
D
= 10A
Forward Transfer Admittance |Y
fs
| — 21 — S V
DS
= -5V, I
D
= -10A
Diode Forward Voltage V
SD
— -0.7 -1.0 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C iss
— 2246 — pF
V DS = -15V, V GS = 0V,
f = 1.0MHz
Output Capacitance C
oss
— 352 — pF
Reverse Transfer Capacitance C
rss
— 294 — pF
Gate resistance R
g
— 5.1 — Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 20.5 — nC
V GS = -10V, V DS = -15V,
I
D
= -12A
Total Gate Charge (V
GS
= 10V) Q
g
— 41 — nC
Gate-Source Charge Q
gs
— 7.6 — nC
Gate-Drain Charge Q gd
— 8.0 — nC
Turn-On Delay Time t
D(on)
— 11.3 — ns
V
DD
= -15V, V
GS
= -10V,
R
L
= 1.25 Ω, R
G
= 3 Ω,
Turn-On Rise Time t
r
— 15.4 — ns
Turn-Off Delay Time t D(off)
— 38.0 — ns
Turn-Off Fall Time t
f
— 22.0 — ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.